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M68AW127BL10N1T View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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M68AW127BL10N1T
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M68AW127BL10N1T Datasheet PDF : 20 Pages
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M68AW127B
Figure 13. E1 Controlled, Low VCC Data Retention AC Waveforms
3.6V
VCC
2.7V
VDR > 1.5V (1)
E1
DATA RETENTION MODE
tCDR
E1 VDR – 0.2V
Note: 1. For 100ns speed class VDR 2.0V.
Figure 14. E2 Controlled, Low VCC Data Retention AC Waveforms
tR
AI05980
3.6V
VCC
2.7V
VDR > 1.5V (1)
E2
DATA RETENTION MODE
tCDR
E2 0.2V
tR
AI05957B
Note: 1. For 100ns speed class VDR 2.0V.
Table 9. Low VCC Data Retention Characteristics
Symbol
Parameter
Test Condition
Min Typ
ICCDR (1)
Supply Current
(Data Retention)
VCC = 1.5V, E1 VCC –0.2V or 70
E2 0.2V, f = 0
100
tCDR (1,2)
Chip Deselected to Data
Retention Time
0
tR (2) Operation Recovery Time
70
tAVAV
100
5
VDR (1)
Supply Voltage
(Data Retention)
E1 VCC –0.2V or
E2 0.2V, f = 0
70
1.5
100
2.0
Note: 1. All other Inputs at VIH VCC –0.2V or VIL 0.2V.
2. Tested initially and after any design or process that may affect these parameters. tAVAV is Read cycle time.
3. No input may exceed VCC +0.2V.
Max
4.5
5
Unit
µA
µA
ns
ns
ms
V
V
14/20
 

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