MC33888APNB View Datasheet(PDF) - Freescale Semiconductor
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MC33888APNB Datasheet PDF : 32 Pages
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Freescale Semiconductor, Inc.
STATIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions 6.0 V ≤ VPWR ≤ 27 V, 4.5 V ≤ VDD ≤ 5.5 V, -40°C ≤ TJ ≤ 150°C unless otherwise noted. Typical
values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max Unit
POWER INPUT
Supply Voltage Range
Fully Operational
VPWR
V
6.0
–
27
VPWR Supply Current
TJ > 125°C
TJ ≤ 125°C
IPWR(ON)
mA
–
17
25
–
–
20
VPWR Standby Current (All Outputs OFF, Open Load Detection Disabled,
WAKE = H, RST = H)
TJ > 125°C
TJ ≤ 125°C
IPWR(SBY)
mA
–
4.2
7.0
–
2.9
5.0
Sleep State Supply Current (VPWR < 12.6 V, RST < 0.5 V, WAKE < 0.5 V,
HS[0:3] = 0 V) (Note 11)
TJ = 85°C
TJ = 25°C
IPWR(SS)
µA
–
–
80
–
1.0
25
Logic Supply Voltage Range
VDD
4.5
5.0
5.5
V
Logic Supply Current
TJ > 125°C
TJ ≤ 125°C
IDD(ON)
mA
–
4.2
7.0
–
2.9
5.0
Logic Supply Sleep State Current
IDD(SS)
–
–
5.0
µA
Sleep State Low-Side Output Leakage Current (per Low-Side Output,
RST = LOW)
TJ = 85°C
TJ = 25°C
ISLK(SS)
µA
–
–
3.0
–
–
1.0
Overvoltage Shutdown Threshold
VPWROV
28.5
32
36
V
Overvoltage Shutdown Hysteresis
VPWROV(HYS)
0.2
0.6
1.5
V
Undervoltage High-Side Output Shutdown (Note 12)
VPWRUV
5.0
5.6
6.0
V
Undervoltage Low-Side Output Shutdown
APNB Suffix Only (Note 12)
PNB and FB Suffixes
VPWRUV
V
3.0
4.0
4.4
5.0
5.6
6.0
Undervoltage High-Side Shutdown Hysteresis
VPWRUV(HYS)
0.1
0.3
0.5
V
Notes
11. This parameter is tested at 125°C with a maximum value of 10 µA.
12. SPI/IO and internal logic operational. Outputs will recover in instructed state when VPWR voltage level returns to normal as long as the level
does not go below VPWRUV.
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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