Silicon Junction FETs (Small Signal)
PD Ta
24
20
16
12
8
4
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID VDS
800
Ta=25˚C
700
600
VGS=0V
500
400
– 0.1V
300
– 0.2V
200
– 0.3V
– 0.4V
100
– 0.5V
– 0.6V
0
– 0.7V
0 2 4 6 8 10 12
Drain to source voltage VDS (V)
gm VGS
1.2
VDS=4.5V
f=1kHz
Ta=25˚C
1.0
IDSS=0.9mA
0.8
0.6
0.3mA
0.4
0.1mA
0.2
0
–1.0 – 0.8 – 0.6 – 0.4 – 0.2 0
Gate to source voltage VGS (V)
gm ID
1.2
VDS=4.5V
f=1kHz
Ta=25˚C
1.0
IDSS=0.9mA
0.3mA
0.8
0.1mA
0.6
0.4
0.2
0
0
0.2 0.4 0.6 0.8 1.0
Drain current ID (mA)
NF Rg
24
VDS=4.5V
ID=300µA
Ta=25˚C
20
f=100Hz
16
1kHz
12
10kHz
8
4
0
0.1 0.3 1 3 10 30 100
Signal source resistance Rg (kΩ)
NF f
16
VDS=4.5V
14
ID=300µA
Ta=25˚C
12
10
8
Rg=10kΩ
6
4
2
1000kΩ
100kΩ
0
0.01 0.03 0.1 0.3 1 3 10
Frequency f (KHz)
2SK0065
ID VGS
1.2
VDS=4.5V
1.0
0.8
0.6
Ta=–25˚C
25˚C
0.4
75˚C
0.2
0
–2.0 –1.6 –1.2 – 0.8 – 0.4 0
Gate to source voltage VGS (V)
NF ID
24
VDS=4.5V
Rg=100kW
Ta=25˚C
20
16
f=100Hz
12
1kHz
8
10kHz
4
0
0
0.2 0.4 0.6 0.8 1.0
Drain current ID (mA)
242