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Part Name
Description
K4013 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K4013
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅣ )
Toshiba
K4013 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK4013
r
th
– t
w
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
10
μ
100
μ
1
m
10
m
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
2.78°C/W
100
m
1
10
PULSE WIDTH t
w
(s)
SAFE OPERATING AREA
100
ID max (PULSE)
*
10
ID max (CONTINUOUS)
*
1 ms
*
1
DC OPERATION
Tc
=
25°C
100
μ
s
*
0.1
*
: SINGLE NONPETITIVE PULSE
Tc
=
25°C
Curves must be derated linearly with
increase in temperature
0.01
1
10
100
VDSS max
1000
10000
DRAIN
−
SOURCE VOLTAGE V
DS
IV
E
AS
- T
ch
400
350
300
250
200
150
100
50
0
25
50
75
100
125
CHANN
C
E
H
L
AN
T
N
E
E
M
L T
P
E
E
M
R
PE
A
R
T
A
U
TU
R
R
E
E (
(
IN
IN
IT
I
IA
T
L
IA
)
L
T
)
cH
(
T
℃
c
)
h
150
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
WAVE FORM
R
G
=
25
Ω
V
DD
=
90 V, L
=
14.5 mH
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2009-09-29
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