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2SK4003 View Datasheet(PDF) - Toshiba

Part Name
Description
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2SK4003 Datasheet PDF : 3 Pages
1 2 3
2SK4003
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (πMOS VI)
2SK4003
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
z Low drainsource ON-resistance: RDS (ON) = 1.7 Ω (typ.)
z Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
z Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.9
1.1 ± 0.2
0.6 MAX.
Characteristic
Symbol
Rating
Unit
2.3 2.3
Drainsource voltage
Draingate voltage (RGS = 20 kΩ)
Gatesource voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
V
600
V
±30
V
3
A
12
A
20
W
168
mJ
3
A
2
mJ
150
°C
55 to 150
°C
123
0.8 MAX.
1.1 MAX.
0.6 ± 0.15
0.6 ± 0.15
1. GATE
2. DRAIN
HEAT SINK
3. SOURSE
2
1
3
JEDEC
JEITA
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.2 mH, RG = 25 Ω, IAR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29
 

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