K3715 View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

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K3715

SWITCHING N-CHANNEL POWER MOS FET

NEC => Renesas Technology 

2SK3715

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

Gate Leakage Current

Gate Cut-off Voltage

Forward Transfer Admittance Note

Drain to Source On-state Resistance Note

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

VDS = 60 V, VGS = 0 V

VGS = ±20 V, VDS = 0 V

VDS = 10 V, ID = 1 mA

VDS = 10 V, ID = 38 A

VGS = 10 V, ID = 38 A

VGS = 4 V, ID = 38 A

Input Capacitance

Ciss

VDS = 10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Turn-on Delay Time

Crss

td(on)

f = 1 MHz

VDD = 30 V, ID = 38 A

Rise Time

Turn-off Delay Time

Fall Time

Total Gate Charge

tr

td(off)

tf

QG

VGS = 10 V

RG = 0 Ω

VDD = 48 V

Gate to Source Charge

QGS

VGS = 10 V

Gate to Drain Charge

Body Diode Forward Voltage Note

QGD

VF(S-D)

ID = 75 A

IF = 75 A, VGS = 0 V

Reverse Recovery Time

Reverse Recovery Charge

Note Pulsed

trr

IF = 50 A, VGS = 0 V

Qrr

di/dt = 50 A/µs

MIN.

1.5

33

TYP.

2.0

65

4.8

6.1

8400

1200

530

24

15

116

11

145

21

39

0.92

59

136

MAX.

10

±10

2.5

6.0

9.5

1.5

UNIT

µA

µA

V

S

mΩ

mΩ

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

RG = 25 Ω

L

PG.

50 Ω

VDD

VGS = 20 → 0 V

BVDSS

IAS

ID

VDD

VDS

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

RG

PG.

VGS

0

τ

τ = 1 µs

Duty Cycle ≤ 1%

RL

VDD

VGS

VGS

Wave Form

10%

0

VDS

90%

VDS

VDS

0

Wave Form

td(on)

VGS

90%

90%

10% 10%

tr td(off) tf

ton

toff

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D16378EJ2V0DS

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