K3715 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
View to exact match
K3715 Datasheet PDF : 8 Pages
| |||
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3715
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3715 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3715
Isolated TO-220
FEATURES
• Super low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 38 A)
RDS(on)2 = 9.5 mΩ MAX. (VGS = 4 V, ID = 38 A)
• Low C iss: C iss = 8400 pF TYP.
• Built-in gate protection diode
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
±75
A
ID(pulse)
±300
A
Total Power Dissipation (TC = 25°C)
PT1
40
W
Total Power Dissipation (TA = 25°C)
PT2
2.0
W
Channel Temperature
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tch
150
°C
Tstg
−55 to +150
°C
IAS
67
A
EAS
450
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16378EJ2V0DS00 (2nd edition)
Date Published August 2003 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002
|
|
Share Link: 