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Part Name
Description
K3863(2006) View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K3863
(Rev.:2006)
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
Toshiba
K3863 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
5
COMMON SOURCE
10
Tc
=
25°C
8
PULSE TEST
6
4
5.7
3
5.5
2
5.2
5
1
4.7
4.5
VGS
=
4 V
0
0
2
4
6
8
10
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
10
COMMON SOURCE
VDS
=
20 V
8
PULSE TEST
6
4
Tc
= −
55°C
100
2
25
0
0
2
4
6
8
10
12
GATE
−
SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪
– I
D
10
COMMON SOURCE
VDS
=
20 V
PULSE TEST
Tc
= −
55°C
100
25
1
2SK3863
I
D
– V
DS
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
8
6
8
10
7
6.5
6
4
5.7
5.5
2
5.2
5
VGS
=
4.5 V
0
0
4
8
12
16
20
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
V
DS
– V
GS
20
COMMON SOURCE
Tc
=
25
℃
16
PULSE TEST
12
8
ID
=
5 A
2.5
4
1.2
0
0
4
8
12
16
20
GATE
−
SOURCE VOLTAGE V
GS
(V)
R
DS (ON)
– I
D
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
1
VGS
=
10 V
、
15V
0.1
0.1
1
10
DRAIN CURRENT I
D
(A)
0.1
0.1
1
10
DRAIN CURRENT I
D
(A)
3
2006-11-06
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