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Part Name
Description
K3798 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K3798
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
Toshiba
K3798 Datasheet PDF : 6 Pages
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2SK3798
r
th
– t
w
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
10
μ
100
μ
SINGLE PULSE
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
3.125°C/W
1
m
10
m
100
m
1
10
PULSE WIDTH t
w
(s)
SAFE OPERATING AREA
100
ID max (PULSED)
*
10
ID max (CONTINUOUS)
*
100
μ
s
*
1 ms
*
1
DC OPERATION
Tc
=
25°C
0.1
※
SINGLE NONREPETITIVE PULSE Tc=25
℃
CURVES MUST BE DERATED LINEARLY WITH
INCREASE IN TEMPERATURE
.
0.01
1
10
100
DRAIN-SOURCE VOLTAGE V
DS
1000
(V)
E
AS
– T
ch
400
300
200
100
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
WAVE FORM
R
G
=
25
Ω
V
DD
=
90 V, L
=
39.6mH
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2009-09-29
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