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K3767 View Datasheet(PDF) - Toshiba

Part Name
Description
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K3767 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK3767
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1 A
VDS = 10 V, ID = 1 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
±10
μA
±30
V
100
μA
600
V
2.0
4.0
V
3.3 4.5
Ω
0.8 1.6
S
320
30
pF
100
tr
10 V
VGS
ton
0V
tf
ID = 1A
15
Output
RL =
200 Ω
55
ns
20
VDD ∼− 200 V
toff
Duty 1%, tw = 10 μs
80
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 2 A
Qgd
9
5
nC
4
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 2 A, VGS = 0 V
IDR = 2 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
2
A
5
A
1.7
V
1000
ns
3.5
μC
Marking
K3767
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
Part No. (or abbreviation code)
Lot No.
environmental matters such
as the
RoHS compatibility of
Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
Note 4
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
 

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