K3574 View Datasheet(PDF) - TY Semiconductor

Part Name

Description

View to exact match

K3574

MOS Field Effect Transistor

TY Semiconductor 

SMD Type

IC

Product specification

2SK3574

Features

4.5V drive available.

Low on-state resistance,

RDS(on)1 = 13.5m MAX. (VGS = 10 V, ID = 24A)

Low gate charge

QG = 22nC TYP. (VDD = 24 V, VGS = 10 V, ID = 48 A)

Built-in gate protection diode

Surface mount device available

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current

Power dissipation TC=25

TA=25

Channel temperature

Storage temperature

* PW 10 s,Duty Cycle 1%

Symbol

VDSS

VGSS

ID

Idp *

PD

Tch

Tstg

TO-263

+0.2

4.57 +0.1

-0.2

1.27-0.1

Unit: mm

1.27+0.1

-0.1

0.1max

2.54+0.2

-0.2

5.08+0.1

-0.1

0.81+0.1

-0.1

2.54

0.4+0.2

-0.2

Rating

Unit

30

V

20

V

48

A

140

A

29

W

1.5

150

-55 to +150

1 Gate

2 Drain

3 Source

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate cut off voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Symbol

IDSS

IGSS

VGS(off)

Yfs

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

ton

tr

toff

tf

QG

QGS

QGD

Testconditons

Min Typ Max Unit

VDS=30V,VGS=0

10

A

VGS= 20V,VDS=0

10

A

VDS=10V,ID=1mA

1.5

2.5 V

VDS=10V,ID=42A

7.0

S

VGS=10V,ID=42A

10.1 13.5 m

VGS=4.5V,ID=15A

15 24 m

940

pF

VDS=10V,VGS=0,f=1MHZ

245

pF

170

pF

12

ns

18

ns

ID=24A,VGS(on)=10V,RG=10 ,VDD=15V

39

ns

12

ns

VDD = 24V

VGS = 10 V

ID = 48 A

22

nC

3.8

nC

7

nC

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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