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K3570-Z View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
K3570-Z
Renesas
Renesas Electronics Renesas
K3570-Z Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
2SK3570
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Zero Gate Voltage Drain Current
IDSS VDS = 20 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
VGS(off) VDS = 10 V, ID = 1 mA
| yfs | VDS = 10 V, ID = 24 A
RDS(on)1 VGS = 10 V, ID = 24 A
RDS(on)2 VGS = 4.5 V, ID = 15 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
VGS = 0 V
f = 1 MHz
VDD = 10 V, ID = 24 A
VGS = 10 V
RG = 10
VDD = 16 V
VGS = 10 V
ID = 48 A
IF = 48 A, VGS = 0 V
IF = 48 A, VGS = 0 V
di/dt = 100 A/µs
5 TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
90%
VGS
90%
10% 10%
tr td(off)
tf
ton
toff
MIN.
1.5
8.0
TYP.
8.2
12.3
930
360
250
13
20
39
14
23
4
7
1.1
33
25
MAX.
Unit
10
µA
±10
µA
2.5
V
S
12
m
22
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50
VDD
2
Data Sheet D16256EJ2V0DS
 

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