K3638 View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

View to exact match

K3638

SWITCHING N-CHANNEL POWER MOSFET

NEC => Renesas Technology 

2SK3638

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

Gate Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

Gate Cut-off Voltage

Forward Transfer Admittance Note

Drain to Source On-state Resistance Note

VGS(off)

| yfs |

RDS(on)1

VDS = 10 V, ID = 1 mA

VDS = 10 V, ID = 32 A

VGS = 10 V, ID = 32 A

RDS(on)2 VGS = 4.5 V, ID = 18 A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Ciss

Coss

Crss

VDS = 10 V

VGS = 0 V

f = 1 MHz

Turn-on Delay Time

Rise Time

Turn-off Delay Time

td(on)

tr

td(off)

VDD = 10 V, ID = 32 A

VGS = 10 V

RG = 10 Ω

Fall Time

tf

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Body Diode Forward Voltage Note

QG

QGS

QGD

VF(S-D)

VDD = 16 V

VGS = 10 V

ID = 64 A

IF = 64 A, VGS = 0 V

Reverse Recovery Time

Reverse Recovery Charge

trr

IF = 64 A, VGS = 0 V

Qrr

di/dt = 100 A/µs

Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%

MIN.

1.5

12

TYP.

25

6.8

10

1100

450

170

10

4.3

35

9.7

22

4.3

5.1

1.0

31

23

MAX.

10

±10

2.5

8.5

15

UNIT

µA

µA

V

S

mΩ

mΩ

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

TEST CIRCUIT 1 SWITCHING TIME

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

RG

PG.

VGS

0

τ

τ = 1 µs

Duty Cycle ≤ 1%

RL

VDD

VGS

VGS

Wave Form

10%

0

VDS

90%

VDS

VDS

Wave Form

0

td(on)

VGS 90%

90%

10% 10%

tr td(off) tf

ton

toff

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D15966EJ3V0DS

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