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K3635 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3635
NEC
NEC => Renesas Technology NEC
K3635 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK3635
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 200 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 4.0 A
Drain to Source On-state Resistance
RDS(on) VGS = 10 V, ID = 4.0 A
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 100 V, ID = 4.0 A
Rise Time
tr
VGS = 10 V
Turn-off Delay Time
td(off)
RG = 0
Fall Time
tf
Total Gate Charge
QG
VDD = 160 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
QGD ID = 8.0 A
Body Diode Forward Voltage
VF(S-D) IF = 8 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 8 A, VGS = 0 V
Qrr
di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
10 µA
±10 µA
2.5 3.5 4.5 V
3
5
S
0.34 0.43
390
pF
95
pF
45
pF
5
ns
7
ns
19
ns
6
ns
12
nC
2
nC
6
nC
1.0
V
110
ns
360
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
L
PG.
50
VDD
VGS = 20 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
0 10%
VGS
90%
ID
90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50
VDD
2
Data Sheet D15932EJ2V0DS
 

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