datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

K3544 View Datasheet(PDF) - Toshiba

Part Name
Description
View to exact match
K3544 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK3544
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π-MOS V)
2SK3544
Switching Regulator Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 0.29 (typ.)
High forward transfer admittance: |Yfs| = 5.8 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V)
Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
Drain–gate voltage (RGS = 20 kΩ)
Gate–source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
450
V
450
V
±30
V
13
A
52
100
W
350
mJ
13
A
4.5
mJ
150
°C
55 to 150
°C
JEDEC
JEITA
TOSHIBA
2-9F1C
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
4
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.25
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.46 mH, RG = 25 Ω, IAR = 13 A
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]