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K3530 View Datasheet(PDF) - Fuji Electric

Part Name
Description
View to exact match
K3530
Fuji
Fuji Electric Fuji
K3530 Datasheet PDF : 4 Pages
1 2 3 4
2SK3530-01MR
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
101
100
Ciss
10-1
Coss
10-2
Crss
10-3
100
101
102
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
103
tf
102
td(off)
td(on)
101
tr
100
10-1
100
101
ID [A]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=7A,Tch=25°C
14
12
Vcc= 160V
400V
10
640V
8
6
4
2
0
0
5
10
15
20
25
30
35
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
10
1
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=80V
600
I =3A
AS
500
400
I =5A
AS
300
I =7A
AS
200
100
0
0
25
50
75
100
125
150
starting Tch [°C]
3
 

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