K3525 View Datasheet(PDF) - Fuji Electric
Part Name
Description
View to exact match
K3525 Datasheet PDF : 4 Pages
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2SK3525-01MR
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10n
Ciss
1n
100p
Coss
10p
Crss
1p
10-1
100
101
102
103
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
102
tr
td(off)
101
td(on)
tf
100
100
101
ID [A]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=3A, Tch=25°C
24
22
20
Vcc= 120V
18
300V
16
480V
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10
1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
Maximum Avalanche Energy vs. starting Tch
E =f(starting Tch):Vcc=60V
AS
350
300
I =4A
AS
250
I =5A
AS
200
I =8A
150 AS
100
50
0
0
25
50
75
100
125
150
starting Tch [°C]
3
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