K3520 View Datasheet(PDF) - Fuji Electric

Part Name

Description

View to exact match

K3520

N-CHANNEL SILICON POWER MOSFET

Fuji Electric 

2SK3520-01MR

Super FAP-G Series

Features

High speed switching

Low on-resistance

No secondary breadown

Low driving power

Avalanche-proof

FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

Outline Drawings

TO-220F

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DC converters

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25°C unless otherwise specified)

Item

Symbol

Ratings

Unit

Drain-source voltage

VDS

500

V

Continuous drain current

ID

±8

A

Pulsed drain current

ID(puls]

±32

A

Gate-source voltage

VGS

±30

V

Repetitive or non-repetitive

IAR

*2

8

A

Maximum Avalanche Energy

EAS

*1

173

mJ

Maximum Drain-Source dV/dt

dVDS/dt *4

20

kV/µs

Peak Diode Recovery dV/dt

dV/dt *3

5

kV/µs

Max. power dissipation

PD Ta=25°C

Tc=25°C

2.16

W

35

Operating and storage

Tch

+150

°C

temperature range

Tstg

-55 to +150

°C

*1 L=4.98mH, Vcc=50V *2 Tch<=150°C *3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C

*4 VDS<= 500V

Electrical characteristics (Tc =25°C unless otherwise specified)

Equivalent circuit schematic

Drain(D)

Gate(G)

Source(S)

Item

Drain-source breakdown voltaget

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time ton

Turn-off time toff

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Avalanche capability

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

Symbol

V(BR)DSS

VGS(th)

IDSS

IGSS

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QG

QGS

QGD

IAV

VSD

trr

Qrr

Test Conditions

ID= 250µA VGS=0V

ID= 250µA VDS=VGS

VDS=500V VGS=0V

VDS=400V VGS=0V

VGS=±30V VDS=0V

Tch=25°C

Tch=125°C

ID=4A VGS=10V

ID=4A VDS=25V

VDS=25V

VGS=0V

f=1MHz

VCC=300V ID=4A

VGS=10V

RGS=10 Ω

VCC=250V

ID=8A

VGS=10V

L=4.98mH Tch=25°C

IF=8A VGS=0V Tch=25°C

IF=8A VGS=0V

-di/dt=100A/µs Tch=25°C

Min.

500

3.0

3.5

8

Typ.

10

0.65

7

750

100

4.0

14

9

24

6

20

8.5

5.5

1.00

0.65

3.5

Max. Units

V

5.0

V

25

µA

250

100

nA

0.85 Ω

S

1130

pF

150

6.0

21

ns

14

36

9

30

nC

13

8.5

A

1.50 V

µs

µC

Thermalcharacteristics

Item

Thermal resistance

Symbol

Rth(ch-c)

Rth(ch-a)

Test Conditions

channel to case

channel to ambient

Min. Typ.

Max.

3.57

58.0

Units

°C/W

°C/W

1

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