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2SK3479 View Datasheet(PDF) - TY Semiconductor

Part Name
Description
View to exact match
2SK3479
Twtysemi
TY Semiconductor Twtysemi
2SK3479 Datasheet PDF : 1 Pages
1
SMD Type
Product specification
2SK3479
Features
Super low on-state resistance:
RDS(on)1 = 11 m MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 13 m MAX. (VGS = 4.5 V, ID = 42 A)
Low Ciss: Ciss = 11000 pF TYP.
Built-in gate protection diode
TO-263
+0.2
4.57 +0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
100
V
VGSS
20
V
ID
83
A
Idp *
332
A
125
PD
W
1.5
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
VDS=100V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=42A
VGS=10V,ID=42A
VGS=4.5V,ID=42A
VDS=10V,VGS=0,f=1MHZ
ID=42A,VGS(on)=10V,RG=0 ,VDD=50V
ID =83A, VDD =80V, VGS = 10 V
Min Typ Max Unit
10
A
10
A
1.5
2.5 V
37 74
S
8.8 11 m
10 13 m
11000
pF
1100
pF
540
pF
27
ns
18
ns
140
ns
13
ns
210
nC
26
nC
60
nC
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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