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K3432 View Datasheet(PDF) - TY Semiconductor

Part Name
Description
View to exact match
K3432 Datasheet PDF : 1 Pages
1
SMD Type
MOSFET
Product specification
2SK3432
Features
Super low on-state resistance:
RDS(on)1 = 4.0m MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 6.9 m MAX. (VGS = 4 V, ID = 42 A)
Low Ciss: Ciss = 9500 pF TYP.
Built-in gate protection diode
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
TO-263
+0.2
4.57 +0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
Rating
Unit
40
V
20
V
83
A
332
A
100
W
1.5
150
-55 to +150
1 Gate
2 Drain
3 Source
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=40V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.5 2.0 2.5 V
VDS=10V,ID=42A
40 80
S
VGS=10V,ID=42A
3.2 4.0 m
VGS=4V,ID=42A
4.8 6.9 m
9500
pF
VDS=10V,VGS=0,f=1MHZ
2200
pF
920
pF
140
ns
1800
ns
ID=42A,VGS(on)=10V,RG=10 ,VDD=20V
470
ns
410
ns
150
nC
ID =83A, VDD =32V, VGS = 10 V
29
nC
45
nC
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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