2SK3404 View Datasheet(PDF) - TY Semiconductor

Part Name

Description

View to exact match

2SK3404

MOS Field Effect Transistor

TY Semiconductor 

SMD Type

TraMnOsiSstFIoCErsT

Product specification

2SK3404

Features

4.5-V drive available

Low on-state resistance

RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 20 A)

Low gate charge

QG = 25 nC TYP. (ID = 40 A, VDD = 24 V, VGS = 10 V)

Built-in gate protection diode

Surface mount device available

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current

Power dissipation TC=25

TA=25

Channel temperature

Storage temperature

* PW 10 s,Duty Cycle 1%

Symbol

VDSS

VGSS

ID

Idp *

PD

Tch

Tstg

TO-263

+0.2

4.57 +0.1

-0.2

1.27-0.1

Unit: mm

1.27+0.1

-0.1

0.1max

2.54+0.2

-0.2

5.08+0.1

-0.1

0.81+0.1

-0.1

2.54

0.4+0.2

-0.2

1 Gate

2 Drain

3 Source

Rating

Unit

30

V

20

V

40

A

160

A

40

W

1.5

150

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gat cutoff voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Symbol

IDSS

IGSS

VGS(off)

Yfs

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

ton

tr

toff

tf

QG

QGS

QGD

Testconditons

Min Typ Max Unit

VDS=30V,VGS=0

10

A

VGS= 20V,VDS=0

10

A

VDS=10V,ID=1mA

1.5

2.5 V

VDS=10V,ID=20A

8.0

S

VGS=10V,ID=20A

11 14 m

VGS=4.5V,ID=20A

15 21 m

1400

pF

VDS=10V,VGS=0,f=1MHZ

410

pF

180

pF

20

ns

9

ns

ID=20A,VGS(on)=10V,RG=10 ,VDD=15V

50

ns

14

ns

25

nC

ID =40A, VDD = 24 V, VGS = 10 V

5.0

nC

7.0

nC

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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