K3294 View Datasheet(PDF) - TY Semiconductor

Part Name

Description

View to exact match

K3294

MOS Field Effect Transistor

TY Semiconductor 

SMD Type

Features

Gate voltage rating 30 V

Low on-state resistance

RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A)

Low input capacitance

Ciss = 1500 pF TYP. (VDS = 10 V, VGS = 0 V)

Avalanche capability rated

Built-in gate protection diode

Surface mount device available

MOSFET

Product specification

2SK3294

TO-263

+0.2

4.57 +0.1

-0.2

1.27-0.1

Unit: mm

1.27+0.1

-0.1

0.1max

2.54+0.2

-0.2

5.08+0.1

-0.1

0.81+0.1

-0.1

2.54

0.4+0.2

-0.2

1 Gate

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current

Power dissipation TC=25

TA=25

Channel temperature

Storage temperature

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gat cutoff voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Symbol

Rating

Unit

VDSS

250

V

VGSS

30

V

ID

20

A

Idp *

60

A

100

PD

W

1.5

Tch

150

Tstg

-55 to +150

Symbol

IDSS

IGSS

VGS(off)

Yfs

RDS(on)

Ciss

Coss

Crss

ton

tr

toff

tf

Testconditons

VDS=250V,VGS=0

VGS= 30V,VDS=0

VDS=10V,ID=1mA

VDS=10V,ID=10A

VGS=10V,ID=10A

VDS=10V,VGS=0,f=1MHZ

ID=10A,VGS(on)=10V,RG=10

,VDD=125V

Min Typ Max Unit

100

A

10

A

2.5

4.5 V

6.0

S

120 160 m

1500

pF

360

pF

220

pF

24

ns

78

ns

110

ns

60

ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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