K3418 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
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K3418 Datasheet PDF : 8 Pages
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2SK3418
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12
ID = 50 A
8
4V
10, 20 A
4
10, 20, 50 A
VGS = 10 V
0
–50 0
50 100 150 200
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
20
ID = 85 A
80
V GS
16
60
40
V DS
12
VDS = 50 V
25 V
10 V 8
20
VDS = 50 V
4
25 V
10 V
0
0
80 160 240 320 400
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
500
V DS = 10 V
200 Pulse Test
100
50
Tc = – 25°C
20
10
5
2
1
0.5
0.1 0.3
25°C
75°C
1 3 10 30 100
Drain Current ID (A)
30000
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
300
Crss
100
0
10
20 30 40
50
Drain to Source Voltage VDS (V)
1000
500
Switching Characteristics
t d(off)
tf
200
100
tr
50
td(on)
20
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
10
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
Rev.2.00 Sep. 10, 2004 page 4 of 7
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