K3418 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

View to exact match

K3418

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK3418

Electrical Characteristics

Item

Drain to source breakdown voltage

Zero gate voltage drain current

Gate to source leak current

Gate to source cutoff voltage

Forward transfer admittance

Static drain to source on state

resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Gate to source charge

Gate to drain charge

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Body-drain diode forward voltage

Body-drain diode reverse recovery

time

Note: 1. Pulse test

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

|yfs|

RDS(on)

RDS(on)

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

VDF

trr

Min

60

—

—

1.0

55

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ

—

—

—

—

90

4.3

6.0

9770

1340

470

180

32

36

53

320

700

380

1.0

70

Max

—

10

±0.1

2.5

—

5.5

9.0

—

—

—

—

—

—

—

—

—

—

—

—

Unit

V

µA

µA

V

S

mΩ

mΩ

pF

pF

pF

nC

nC

nC

ns

ns

ns

ns

V

ns

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

VDS = 60 V, VGS = 0

VGS = ±20 V, VDS = 0

VDS = 10 V, ID = 1 mANote1

ID = 45 A, VDS = 10 VNote1

ID = 45 A, VGS= 10 VNote1

ID = 45 A, VGS=4 VNote1

VDS = 10 V

VGS = 0

f = 1 MHz

VDD = 50 V

VGS = 10 V

ID = 85 A

VGS = 10 V

ID= 45 A

RL = 0.67 Ω

IF = 85 A, VGS = 0

IF = 85 A, VGS = 0

diF / dt = 50 A / µs

Rev.2.00 Sep. 10, 2004 page 2 of 7

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