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Part Name
Description
K3453 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K3453
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
K3453 Datasheet PDF : 6 Pages
1
2
3
4
5
6
10
Common source
Tc
=
25°C
8 Pulse test
I
D
−
V
DS
10
6
8
5.2
6
5
4.8
4
4.6
2
VGS
=
4 V
0
0
2
4
6
8
10
Drain-source voltage V
DS
(V)
2SK3453
I
D
−
V
DS
20
10
Common source
8
Tc
=
25°C
16
6
Pulse test
5.6
12
5.2
8
4.6
4
VGS
=
4 V
0
0
10
20
30
40
50
Drain-source voltage V
DS
(V)
20
Common source
VDS
=
20 V
16
Pulse test
12
I
D
−
V
GS
25
8
100
4
Tc
= −
55°C
0
0
2
4
6
8
10
Gate-source voltage V
GS
(V)
V
DS
−
V
GS
20
Common source
Tc
=
25°C
16
Pulse test
12
ID
=
10 A
8
5
4
2.5
0
0
4
8
12
16
20
Gate-source voltage V
GS
(V)
50
Common source
30
VDS
=
20 V
Pulse test
⎪
Y
fs
⎪ −
I
D
10
Tc
= −
55°C
5
3
100
25
1
0.5
0.3
0.1
0.1
0.3 0.5 1
3 5 10
Drain current I
D
(A)
30 50 100
R
DS (ON)
−
I
D
50
Common source
30
Tc
=
25°C
Pulse test
10
5
3
VGS
=
10, 15 V
1
0.5
0.3
0.1
0.1
0.3 0.5 1
3 5 10
Drain current I
D
(A)
30 50
3
2009-09-29
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