6
Common source
VDS = 10 V
5 Pulse test
4
RDS (ON) – Tc
ID = 75 A
19, 38
3
2
1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
10000
Capacitance – VDS
Ciss
3000
Coss
1000
Crss
Common source
300 VGS = 0 V
f = 1 MHz
Tc = 25°C
100
0.1
0.3
1
3
10
30
Drain-source voltage VDS (V)
2SK3439
300
100
50
30
10
5
3
1
0.5
0.3
0.1
0
IDR – VDS
10
3
5
1
VGS = 0 V
Common source
Tc = 25°C
Pulse test
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Drain-source voltage VDS (V)
Vth – Tc
4
Common source
VDS = 10 V
3
ID = 1 mA
Pulse test
2
1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
PD – Tc
200
160
120
80
40
10
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output characteristics
50
20
Common source
ID = 75 A
40 Tc = 25°C
Pulse test
VGS
16
30
VDS
20
6
12
VDD = 24 V
12
8
10
4
0
0
0
40
80
120
160
200
Total gate charge Qg (nC)
4
2006-11-16