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Part Name
Description
K3439 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K3439
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Toshiba
K3439 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
100
Common source
6
4
Tc
=
25°C
3.5
Pulse test
8
80
3.3
10
60
40
3.0
20
VGS
=
2.8 V
0
0
0.2
0.4
0.6
0.8
1.0
Drain-source voltage V
DS
(V)
2SK3439
100
10 4
6
80
60
40
20
I
D
– V
DS
3.4
Common source
Tc
=
25°C
Pulse test
3.2
3.0
VGS
=
2.8 V
0
0
1
2
3
4
5
Drain-source voltage V
DS
(V)
160
Common source
VDS
=
10 V
Pulse test
120
I
D
– V
GS
80
40
Tc
= −
55°C
100
25
0
0
2
4
6
Gate-source voltage V
GS
(V)
V
DS
– V
GS
0.8
Common source
Tc
=
25°C
Pulse test
0.6
0.4
ID
=
75 A
0.2
38
19
0
0
5
10
15
20
Gate-source voltage V
GS
(V)
500
300
100
50
30
10
5
3
1
⎪
Y
fs
⎪
– I
D
Tc
= −
55°C
100
25
3 5 10
Common source
VDS
=
10 V
Pulse test
30 50 100
300
Drain current I
D
(A)
30
Common source
Tc
=
25°C
Pulse test
10
R
DS (ON)
– I
D
VGS
=
4 V
5
10
3
1
0.5
1
35
10
30 50 100
Drain current I
D
(A)
3
2006-11-16
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