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Part Name
Description
K3437 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K3437
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
K3437 Datasheet PDF : 6 Pages
1
2
3
4
5
6
10
Common source
Tc
=
25°C
Pulse test
8
I
D
– V
DS
15 10
6
4
2
7.75
7.5
7.25
7.0
6.75
6.5
VGS
=
6.0 V
0
0
4
8
12
16
20
Drain-source voltage V
DS
(V)
2SK3437
20
Common source
Tc
=
25°C
Pulse test
16
I
D
– V
DS
15
10
8.5
8.0
12
8
7.5
7.25
7.0
4
6.5
VGS
=
6.0 V
0
0
10
20
30
40
50
Drain-source voltage V
DS
(V)
12
Common source
VDS
=
20 V
Pulse test
10
I
D
– V
GS
8
6
4
25
2
100
Tc
= −
55°C
0
0
2
4
6
8
10
Gate-source voltage V
GS
(V)
100
Common source
VDS
=
20 V
Pulse test
⎪
Y
fs
⎪
– I
D
10
Tc
= −
55°C
25
100
1
V
DS
– V
GS
20
Common source
Tc
=
25°C
Pulse test
16
12
ID
=
10 A
8
5
4
2.5
0
0
4
8
12
16
20
Gate-source voltage V
GS
(V)
R
DS (ON)
– I
D
100
Common source
Tc
=
25°C
Pulse test
10
VGS
=
10, 15 V
1
0.1
0.1
1
10
100
Drain current I
D
(A)
0.1
0.1
1
10
100
Drain current I
D
(A)
3
2010-01-29
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