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Part Name
Description
K3407 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K3407
Silicon N Channel MOS Type (π-MOSV) Field Effect Transistor
Toshiba
K3407 Datasheet PDF : 0 Pages
2SK3407
r
th
– t
w
10
5
3
1
Duty
=
0.5
0.5
0.3
0.2
0.1
0.1
0.05
0.05
0.03
0.02
0.01
0.01
0.005
0.003
0.001
10
μ
Single pulse
100
μ
1m
10 m
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
3.125°C/W
100 m
1
10
Safe operating area
100
Pulse width t
w
(S)
400
E
AS
– T
ch
ID max (pulse)
*
ID max
300
100
μ
s
*
(continuous)
10
1 ms
*
200
1
DC operation
Tc
=
25°C
0.1
0.01
1
*
Single nonrepetitive pulse
Tc
=
25°C
Curves must be derated
linearly with increase in
temperature.
10
VDSS max
100
Drain-source voltage V
DS
(V)
1000
100
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
Ω
V
DD
=
90 V, L
=
3.7 mH
Wave form
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2006-11-06
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