2SK3362-01 View Datasheet(PDF) - Fuji Electric
Part Name
Description
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2SK3362-01 Datasheet PDF : 4 Pages
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2SK3362-01 FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
Avalanche-proof
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
Outline Drawings
TO-220AB
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source peak voltage
Maximum avalanche energy
Maximum power dissipation
Operating and storage
temperature range
Symbol
VDS
ID
ID[puls]
VGS
EAV
PD
Tch
Tstg
Rating
60
Unit Remarks
V
±50
A
±200
A
±20
V
867
mJ *1
80
W
+150
°C
-55 to +150 °C
*1 L=0.463mH, Vcc=24V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=60V VGS=0V
VGS=±20V VDS=0V
ID=40A VGS=10V
ID=40A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=30V RG=10 Ω
ID=75A
VGS=10V
Tch=25°C
Tch=125°C
VGS=4V
VGS=10V
L=100µH Tch=25°C
IF=160A VGS=0V Tch=25°C
IF=80A
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
60
V
1.0 1.5
2.0 V
10
500
µA
0.2
1.0 mA
10
100
nA
12
17
mΩ
7.5
10
mΩ
25
55
S
3500 5250
1250 1870
pF
360
540
15
23
75
120
190
285
ns
110
165
50
A
1.15
1.65 V
75
120
ns
0.17
µC
Thermal characteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Min. Typ.
Max.
1.56
75.0
Units
°C/W
°C/W
1
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