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Part Name
Description
K3389(2002) View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K3389
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Toshiba
K3389 Datasheet PDF : 6 Pages
1
2
3
4
5
6
100
Common source
Tc
=
25°C
Pulse test
80
10
60
I
D
– V
DS
5.75
86
5.5
5.25
5
40
4.75
20
VGS
=
4.5 V
0
0
0.2
0.4
0.6
0.8
1.0
Drain-source voltage V
DS
(V)
2SK3389
200
10 8
6.5
160
I
D
– V
DS
Common source
Tc
=
25°C
Pulse test
6
120
5.5
80
5
40
VGS
=
4.5 V
0
0
2
4
6
8
10
Drain-source voltage V
DS
(V)
200
Common source
VDS
=
10 V
160
Pulse test
I
D
– V
GS
120
80
40
Tc
=
100°C
−
55
25
0
0
2
4
6
8
10
Gate-source voltage V
GS
(V)
V
DS
– V
GS
0.5
Common source
Tc
=
25°C
0.4
Pulse test
0.3
0.2
ID
=
75 A
35
0.1
15
0
0
4
8
12
16
20
Gate-source voltage V
GS
(V)
1000
Common source
VDS
=
10 V
Pulse test
100
Y
fs
– I
D
25
−
55
Tc
=
100°C
10
100
Common source
Tc
=
25°C
Pulse test
R
DS (ON)
– I
D
10
VGS
=
10 V
15 V
1
1
1
10
100
1000
Drain current I
D
(A)
0.1
1
10
100
1000
Drain current I
D
(A)
3
2002-03-04
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