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K3389(2002) View Datasheet(PDF) - Toshiba

Part Name
Description
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K3389 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK3389
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3389
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 3.8 m(typ.)
High forward transfer admittance: |Yfs| = 70 S (typ.)
Low leakage current: IDSS = 100 µA (VDS = 30 V)
Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC
(Note 1)
Pulse
(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
30
V
30
V
±30
V
75
A
300
125
W
731
mJ
75
A
12.5
mJ
150
°C
55 to 150
°C
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
Rth (ch-c)
Max
1.00
Unit
°C/W
JEDEC
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
4
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
1
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 95 µH, IAR = 75 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
2
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2002-03-04
 

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