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Part Name
Description
K3387 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K3387
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOSV)
Toshiba
K3387 Datasheet PDF : 0 Pages
R
DS (ON)
– Tc
200
Common source
Pulse test
160
ID
=
18 A
9
120
4.5
80
40
VGS
=
10 V
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
2SK3387
100
Common source
50
Tc
=
25°C
Pulse test
30
I
DR
– V
DS
10
10
5
3
5
3
1
VGS
=
0,
−
1 V
1
0
−
0.4
−
0.8
−
1.2
−
1.6
Drain-source voltage V
DS
(V)
5000
3000
1000
500
300
Capacitance – V
DS
Ciss
Coss
100
Common source
50 VGS
=
0 V
30 f
=
1 MHz
Tc
=
25°C
Pulse test
10
0.1
0.3 0.5 1
Crss
3 5 10
30 50 100
Drain-source voltage V
DS
(V)
4
Common source
VDS
=
10 V
3
ID
=
1 mA
Pulse test
V
th
– Tc
2
1
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
P
D
– Tc
150
100
50
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic input/output characteristics
160
16
120
VDS
80
40
12
30
60
8
VDD
=
120 V
VGS
Common source
ID
=
18 A
Tc
=
25°C
4
Pulse test
0
0
0
20
40
60
Total gate charge Q
g
(nC)
4
2006-11-20
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