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K3387 View Datasheet(PDF) - Toshiba

Part Name
Description
View to exact match
K3387 Datasheet PDF : 0 Pages
RDS (ON) – Tc
200
Common source
Pulse test
160
ID = 18 A
9
120
4.5
80
40
VGS = 10 V
0
80
40
0
40
80
120
160
Case temperature Tc (°C)
2SK3387
100
Common source
50 Tc = 25°C
Pulse test
30
IDR – VDS
10
10
5
3
5
3
1
VGS = 0, 1 V
1
0
0.4
0.8
1.2
1.6
Drain-source voltage VDS (V)
5000
3000
1000
500
300
Capacitance – VDS
Ciss
Coss
100
Common source
50 VGS = 0 V
30 f = 1 MHz
Tc = 25°C
Pulse test
10
0.1
0.3 0.5 1
Crss
3 5 10
30 50 100
Drain-source voltage VDS (V)
4
Common source
VDS = 10 V
3 ID = 1 mA
Pulse test
Vth – Tc
2
1
0
80
40
0
40
80
120
160
Case temperature Tc (°C)
PD – Tc
150
100
50
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic input/output characteristics
160
16
120
VDS
80
40
12
30
60
8
VDD = 120 V
VGS
Common source
ID = 18 A
Tc = 25°C
4
Pulse test
0
0
0
20
40
60
Total gate charge Qg (nC)
4
2006-11-20
 

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