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Part Name
Description
K3342 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K3342
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Toshiba
K3342 Datasheet PDF : 0 Pages
2SK3342
R
DS (ON)
−
Tc
3.0
Common source
VDS
=
10 V
2.5 Pulse Test
2.0
ID
=
4.5A
2
1.5
1
1.0
0.5
0
−
100
−
50
0
50
100
150
200
Case temperature Tc (°C)
100
Common source
Tc
=
25°C
Pulse Test
I
DR
−
V
DS
10
1
0.1
0
10
5
3
−
1
VGS
=
0V
0.5
1.0
1.5
2.0
Drain-source voltage V
DS
(V)
Capacitance – V
DS
1000
500
Ciss
300
Coss
100
50
30 Common source
VGS
=
0 V
f
=
1MHZ
Tc
=
25°C
10
0.1
0.3 0.5 1
Crss
3 5 10
30
Drain-source voltage V
DS
(V)
5
Common source
VDS
=
10 V
4
ID
=
1mA
Pulse Test
V
th
−
Tc
3
2
1
0
−
100
−
50
0
50
100
150 200
Case temperature Tc (°C)
P
D
−
Tc
40
30
20
10
0
0
40
80
120
160
200
Case temperature Tc (°C)
250
VDS
200
Dynamic input / output
characteristics
25
Common source
ID
=
4.5 A
Tc
=
25°C
Pulse Test
20
150
15
50V
VDD
=
200V
100
100V
10
50
VGS
5
0
0
0
5
10
15
20
Total gate charge Q
g
(nC)
4
2010-02-05
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