Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 7 A
VDS = 10 V, ID = 7 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turn−on time
ton
Switching time
Fall time
tf
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
toff
Qg
Qgs
VDD ≈ 400 V, VGS = 10 V, ID = 15 A
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = 15 A, VGS = 0 V
IDR = 15 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
2SK3314
Min Typ. Max Unit
—
—
±10
μA
±30 —
—
V
—
—
100
μA
500 —
—
V
2.0
—
4.0
V
— 0.35 0.49 Ω
5.0 9.9
—
S
— 2600 —
— 280 —
pF
— 880 —
—
50
—
—
85
—
ns
—
65
—
— 260 —
—
58
—
—
36
—
nC
—
22
—
Min Typ. Max Unit
—
—
15
A
—
—
60
A
—
—
−1.7
V
— 105 180 ns
— 0.24 —
μC
TOSHIBA
K3314
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Part No. (or abbreviation code)
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
Please contact your TOSHIBA sales representative for details as to
Note 4
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2010-03-07