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K3314 View Datasheet(PDF) - Toshiba

Part Name
Description
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K3314 Datasheet PDF : 0 Pages
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 7 A
VDS = 10 V, ID = 7 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turnon time
ton
Switching time
Fall time
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs
VDD 400 V, VGS = 10 V, ID = 15 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 15 A, VGS = 0 V
IDR = 15 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
2SK3314
Min Typ. Max Unit
±10
μA
±30 —
V
100
μA
500 —
V
2.0
4.0
V
— 0.35 0.49
5.0 9.9
S
— 2600 —
— 280 —
pF
— 880 —
50
85
ns
65
— 260 —
58
36
nC
22
Min Typ. Max Unit
15
A
60
A
1.7
V
— 105 180 ns
— 0.24 —
μC
TOSHIBA
K3314
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Part No. (or abbreviation code)
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
Please contact your TOSHIBA sales representative for details as to
Note 4
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2010-03-07
 

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