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K3480-Z View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3480-Z
NEC
NEC => Renesas Technology NEC
K3480-Z Datasheet PDF : 0 Pages
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3480
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3480 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 31 mMAX. (VGS = 10 V, ID = 25 A)
RDS(on)2 = 36 mMAX. (VGS = 4.5 V, ID = 25 A)
Low Ciss: Ciss = 3600 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3480
TO-220AB
2SK3480-S
TO-262
2SK3480-ZJ
2SK3480-Z
TO-263
TO-220SMDNote
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
±50
A
ID(pulse)
±100
A
Total Power Dissipation (TC = 25°C)
PT1
84
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
34
A
EAS
116
mJ
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 0 V
(TO-262)
(TO-263, TO-220SMD)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.48
°C/W
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15078EJ1V0DS00 (1st edition)
©
Date Published December 2001 NS CP(K)
Printed in Japan
2001
 

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