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K3479 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3479
NEC
NEC => Renesas Technology NEC
K3479 Datasheet PDF : 0 Pages
2SK3479
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
Pulsed
20
VGS = 4.5 V
15
10 V
10
5
ID = 42 A
0
50
0
50 100 150
Tch - Channel Temperature - ˚C
100000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
100
0.1
Crss
1
10
100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1.0
10
100
IF - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
VGS = 10 V
0V
10
1
0.10
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1000
100
10
SWITCHING CHARACTERISTICS
tf
td(off)
td(on)
tr
VDD = 50 V
VGS = 10 V
1 RG = 0
0.1
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
160
16
120
VDD = 80 V
80
50 V
20 V
12
VGS
8
40
4
VDS
ID = 83 A
0
0
50
100 150
200 250
QG - Gate Charge - nC
Data Sheet D15077EJ1V0DS
5
 

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