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K3479-Z View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3479-Z
NEC
NEC => Renesas Technology NEC
K3479-Z Datasheet PDF : 0 Pages
2SK3479
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 42 A
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 42 A
RDS(on)2 VGS = 4.5 V, ID = 42 A
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 50 V, ID = 42 A
Rise Time
tr
VGS = 10 V
Turn-off Delay Time
td(off)
RG = 0
Fall Time
tf
Total Gate Charge
QG
VDD = 80 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
QGD ID = 83 A
Body Diode Forward Voltage
VF(S-D) IF = 83 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 83 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
10 µA
±10 µA
1.5
2.5 V
37 74
S
8.8 11 m
10 13 m
11000
pF
1100
pF
540
pF
27
ns
18
ns
140
ns
13
ns
210
nC
26
nC
60
nC
1.0
V
85
ns
280
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
L
PG.
50
VDD
VGS = 20 0 V
IAS
ID
VDD
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
RG
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
90%
VGS
90%
10% 10%
tr td(off)
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50
VDD
2
Data Sheet D15077EJ1V0DS
 

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