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K3479-ZJ View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3479-ZJ
NEC
NEC => Renesas Technology NEC
K3479-ZJ Datasheet PDF : 0 Pages
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3479
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3479 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 11 mMAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 13 mMAX. (VGS = 4.5 V, ID = 42 A)
Low Ciss: Ciss = 11000 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3479
TO-220AB
2SK3479-S
TO-262
2SK3479-ZJ
2SK3479-Z
TO-263
TO-220SMDNote
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
±83
A
ID(pulse)
±332
A
Total Power Dissipation (TC = 25°C)
PT1
125
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150 °C
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
65
A
EAS
422
mJ
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 0 V
(TO-262)
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15077EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
©
Printed in Japan
2000, 2001
 

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