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K3432-ZJ View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3432-ZJ
NEC
NEC => Renesas Technology NEC
K3432-ZJ Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
5 PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
10.6 MAX.
10.0 TYP.
φ 3.6±0.2
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
3) TO-263 (MP-25ZJ)
10 TYP.
4
4.8 MAX.
1.3±0.2
123
1.4±0.2
0.7±0.2
2.54 TYP.
2.54 TYP0. .5R0T.8YRP.TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2SK3432
2) TO-262 (MP-25 Fin Cut)
10 TYP.
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
4) TO-220SMD (MP-25Z) Note
10 TYP.
4
4.8 MAX.
1.3±0.2
123
1.4±0.2
0.75±0.3
2.54 TYP.
2.54 TYP0..50R.8TRYPT.YP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Note This package is produced only in Japan.
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Data Sheet D14601EJ4V0DS
7
 

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