K3432 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
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K3432 Datasheet PDF : 8 Pages
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2SK3432
FORWARD TRANSFER CHARACTERISTICS
1000 Pulsed
100
10
TA = –40˚C
25˚C
75˚C
150˚C
1
0.1
1
VDS = 10 V
2
3
4
5
6
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 VDS = 10 V
Pulsed
10
TA = 150˚C
75˚C
1
25˚C
–40˚C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
350
300
250
VGS =10 V
200
150
100
4V
50
0
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
5
ID = 42 A
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
15
Pulsed
10
VGS = 4 V
5
10 V
0
1
10
100
1000
ID - Drain Current - A
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = 10 V
ID = 1 mA
2.5
2.0
1.5
1.0
0.5
0
−50
0
50
100 150
Tch - Channel Temperature - ˚C
4
Data Sheet D14601EJ4V0DS
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