K3431-S View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
View to exact match
K3431-S Datasheet PDF : 8 Pages
| |||
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3431
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3431 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3431
TO-220AB
FEATURES
• Super low on-state resistance:
RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 8.9 mΩ MAX. (VGS = 4 V, ID = 42 A)
• Low Ciss: Ciss = 6100 pF TYP.
• Built-in gate protection diode
2SK3431-S
2SK3431-ZJ
2SK3431-Z
TO-262
TO-263
TO-220SMDNote
Note TO-220SMD package is produced only
in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
±83
A
ID(pulse)
±332
A
Total Power Dissipation (TC = 25°C)
PT
100
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
65
A
EAS
423
mJ
(TO-220AB)
(TO-262)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14600EJ3V0DS00 (3rd edition)
The mark 5 shows major revised points.
©
Date Published July 2002 NS CP(K)
Printed in Japan
1999, 2000
|
|
Share Link: 