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K3367-Z-E1 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3367-Z-E1
NEC
NEC => Renesas Technology NEC
K3367-Z-E1 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK3367
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
18
16
VGS = 4.0 V
14
12
4.5 V
10
10 V
8
6
4
2
ID = 10 A
0
50
0
50 100 150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
1000
Coss
Crss
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
10
1
0.1
1
10
100
IF - Diode Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
VGS = 10 V
4.5 V
100
0V
10
1
0.1
0.01
0
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
10000 VDD = 15 V
VGS = 10 V
RG = 10
tr
1000
tf
100
10
td(off)
td(on)
1
0.01
0.1
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID = 36 A
14
30
12
VDD = 24 V
10
15 V
20
6V
8
6
VGS
10
4
VDS
2
0
0
20
40
60
80
QG - Gate Charge - nC
Data Sheet D14257EJ1V0DS00
5
 

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