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K3357 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
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K3357
NEC
NEC => Renesas Technology NEC
K3357 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3357
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3357 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 5.8 mMAX. (VGS = 10 V, ID = 38 A)
RDS(on)2 = 8.8 mMAX. (VGS = 4.0 V, ID = 38 A)
Low Ciss: Ciss = 9800 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3357
TO-3P
(TO-3P)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS(AC)
±20
V
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
±75
A
ID(pulse)
±300
A
Total Power Dissipation (TC = 25°C)
PT
150
W
Total Power Dissipation (TA = 25°C)
PT
3.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
–55 to +150
°C
IAS
75
A
EAS
562
mJ
Notes 1. PW 10 µs, Duty cycle 1 %
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 V 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
0.83
°C/W
41.7
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14134EJ2V0DS00 (2nd edition)
The mark 5 shows major revised points.
©
Date Published May 2000 NS CP(K)
Printed in Japan
1999, 2000
 

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