K3355 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
View to exact match
K3355 Datasheet PDF : 8 Pages
| |||
2SK3355
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12
Pulsed
10
VGS = 4.0 V
8
10 V
6
4
2
0
ID = 42 A
−50
0
50 100 150
Tch - Channel Temperature - ˚C
100000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
10000
Ciss
1 000
Coss
Crss
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1.0
10
100
IF - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000 Pulsed
VGS = 10 V
100
VGS = 0 V
10
1
0.10
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
10000
1000
100
SWITCHING CHARACTERISTICS
tr
td(on)
td(off)
tf
10
0.1
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
10
VGS
80
8
VDD = 48 V
60
30 V
6
12 V
40
4
VDS
20
2
0
ID = 83 A
0 20 40 60 80 100 120 140 160
QG - Gate Charge - nC
Data Sheet D14132EJ2V0DS00
5
|
|
Share Link: 