K3355-S View Datasheet(PDF) - NEC => Renesas Technology
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Description
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K3355-S Datasheet PDF : 8 Pages
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2SK3355
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 42 A
RDS(on)2 VGS = 4.0 V, ID = 42 A
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 42 A
Drain Leakage Current
IDSS
VDS = 60 V, VGS = 0 V
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
ID = 42 A, VGS(on) = 10 V, VDD = 30 V,
Rise Time
tr
RG = 10 Ω
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
ID = 83 A , VDD = 48 V, VGS = 10 V
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Body Diode Forward Voltage
VF(S-D) IF = 83 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 83 A, VGS = 0 V,
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
4.6 5.8 mΩ
6.1 8.8 mΩ
1.5 2.0 2.5 V
39 77
S
10 µA
±10 µA
9800
pF
1500
pF
630
pF
130
ns
1450
ns
510
ns
510
ns
170
nC
28
nC
46
nC
0.99
V
64
ns
130
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1 %
RL
VGS
VGS
Wave Form
10 %
0
VGS(on) 90 %
VDD
ID
90 %
ID
ID
0 10 %
Wave Form
90 %
10 %
td(on) tr td(off) tf
ton
toff
2
Data Sheet D14132EJ2V0DS00
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