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K3297 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3297
NEC
NEC => Renesas Technology NEC
K3297 Datasheet PDF : 0 Pages
2SK3297
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
VGS(off)
| yfs |
RDS(on)
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
VDS = 10 V
VGS = 0 V
f = 1 MHz
VDD = 150 V, ID = 2.5 A
VGS(on) = 10 V
RG = 10
VDD = 450 V
VGS = 10 V
ID = 5.0 A
IF = 5.0 A, VGS = 0 V
IF = 5.0 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = 50 A/µs
MIN.
2.5
1.5
TYP.
1.3
750
130
9.7
17
3
37
10
18
4
7
0.9
1.4
5.3
MAX.
Unit
100
µA
±100
nA
3.5
V
S
1.6
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
µs
µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
L
PG.
50
VDD
VGS = 20 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VGS
VGS
Wave Form
0 10%
VGS(on) 90%
VDD
ID
90%
ID
ID
0 10%
Wave Form
90%
10%
td(on) tr td(off) tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50
VDD
2
Data Sheet D14058EJ1V0DS
 

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