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Part Name
Description
K3176 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K3176
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS V)
Toshiba
K3176 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3176
r
th
– t
w
3
1
Duty
=
0.5
0.5
0.3
0.2
0.1
0.1
0.05
0.05
0.02
0.03
0.01
0.01
Single pulse
0.005
0.003
10
μ
100
μ
1m
10 m
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
0.833°C/W
100 m
1
10
Pulse width t
w
(s)
Safe Operating Area
300
ID max (pulse)
*
100
50
ID max (continuous)
30
100
μ
s
*
1 ms
*
10
5
DC operation
3
Tc
=
25°C
1
*
: Single nonrepetitive
0.5
pulse Tc
=
25°C
0.3
Curves must be derated
linearly with increase in
temperature.
0.1
1
3 5 10
VDSS max
30 50 100
300 500
Drain-source voltage V
DS
(V)
E
AS
– T
ch
1000
800
600
400
200
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
Ω
V
DD
=
50 V, L
=
1.66 mH
Wave form
Ε
AS
=
1·L·I
2
·
2
⎝⎛⎜⎜
B
VDSS
B
VDSS
−
V
DD
⎟⎟⎠⎞
5
2009-09-29
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