K3129 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K3129 Datasheet PDF : 3 Pages
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2SK3129
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge (gate-source plus
gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 30 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 30 A
VDS = 10 V, ID = 30 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
―
―
±10
μA
―
―
100
μA
50
―
―
V
0.8
―
2.0
V
―
5.5
7
mΩ
40
70
―
S
― 3700 ―
pF
― 650 ―
pF
― 1800 ―
pF
tr
10 V
VGS
ton
0V
tf
―
20
―
ID = 30 A
VOUT
―
35
―
ns
VDD ≈ 25 V
― 160 ―
toff
Duty ≤ 1%, tw = 10 μs
― 480 ―
Qg
Qgs
VDD ≈ 40 V, VGS = 10 V, ID = 60 A
Qgd
― 135 ―
nC
―
90
―
nC
―
45
―
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current (Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
―
―
IDR = 60 A, VGS = 0 V
IDR = 60 A, VGS = 0 V
dIDR/dt = 50 A/μs
Min Typ. Max Unit
―
―
60
A
―
―
240
A
―
―
−1.4
V
― 180 ―
ns
― 0.32 ―
μC
Marking
TOSHIBA
K3129
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-17
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