datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

K3127 View Datasheet(PDF) - Toshiba

Part Name
Description
View to exact match
K3127 Datasheet PDF : 3 Pages
1 2 3
2SK3127
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VI)
2SK3127
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 9.5 m(typ.)
High forward transfer admittance: |Yfs| = 38 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 30 V)
Enhancement-mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
30
V
30
V
±20
V
45
A
135
65
W
524
mJ
45
A
6
mJ
150
°C
55 to 150
°C
Note 1:
Note 2:
Note 3:
Note 4:
Please use devices on condition that the channel temperature is
below 150°C.
VDD = 25 V, Tch = 25°C (initial), L = 186 μH, RG = 25 Ω, IAR = 45 A
Repetitive rating: pulse width limited by maximum junction
temperature.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max Unit
1.92 °C/W
83.3 °C/W
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
2009-09-29
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]